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SS8050 数据表(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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SS8050 数据表(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 2 page DATA SHEET SEMICONDUCTOR http://www.yeashin.com 1 REV.02 20120705 SS8050 TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (TA=25 ℃) : 2 W (TC=25 ℃) MAXIMUM RATINGS* TA=25 unless otherwise noted ℃ Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1500 mA TJ, Tstg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1 V Transition frequency fT VCE=10V, IC=50mA,f=30MHZ 100 MHz CLASSIFICATION OF hFE(2) Rank B C D E Range 85-160 120-200 160-300 300-400 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR |
类似零件编号 - SS8050 |
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类似说明 - SS8050 |
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