TIP100 datasheet(2/7 Pages) ONSEMI

部件名	TIP100

功能描述	Plastic Medium-Power Complementary Silicon Transistors

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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2 / 7 page

TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)

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MAXIMUM RATINGS

Rating

Symbol

TIP100,

TIP105

TIP101,

TIP106

TIP102,

TIP107

Unit

Collector − Emitter Voltage

VCEO

60

80

100

Vdc

Collector − Base Voltage

VCB

60

80

100

Vdc

Emitter − Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

− Peak

IC

8.0

15

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25°C

Derate above 25°C

PD

80

0.64

W

W/°C

Unclamped Inductive Load Energy (1)

E

30

mJ

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD

2.0

0.016

W

W/°C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.56

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

62.5

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

TIP100, TIP105

TIP101, TIP106

TIP102, TIP107

VCEO(sus)

60

80

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP100, TIP105

(VCE = 40 Vdc, IB = 0)

TIP101, TIP106

(VCE = 50 Vdc, IB = 0)

TIP102, TIP107

ICEO

−

50

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP100, TIP105

(VCB = 80 Vdc, IE = 0)

TIP101, TIP106

(VCB = 100 Vdc, IE = 0)

TIP102, TIP107

ICBO

−

50

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

−

8.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 3.0 Adc, VCE = 4.0 Vdc)

(IC = 8.0 Adc, VCE = 4.0 Vdc)

hFE

1000

200

20,000

−

Collector−Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc)

(IC = 8.0 Adc, IB = 80 mAdc)

VCE(sat)

−

2.0

2.5

Vdc

Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

hfe

4.0

−

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP105, TIP106, TIP107

TIP100, TIP101, TIP102

Cob

−

300

200

pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

类似零件编号 - TIP100

制造商	部件名	数据表	功能描述
Mospec Semiconductor	TIP100	200Kb / 4P	POWER TRANSISTORS(8A,60-100V,80W)
SemiHow Co.,Ltd.	TIP100	744Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
Motorola, Inc	TIP100	218Kb / 6P	DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Micro Commercial Compon...	TIP100	167Kb / 4P	NPN Plastic Medium-Power Silicon Transistors
ON Semiconductor	TIP100	218Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7

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类似说明 - TIP100

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