2SA1036KP datasheet(2/4 Pages) YEASHIN

部件名	2SA1036KP

功能描述	Medium Power Transistor

Download	4 Pages

Scroll/Zoom	100%

制造商	YEASHIN [Yea Shin Technology Co., Ltd]

网页	http://www.yeashin.com

标志

2 / 4 page

http://www.yeashin.com

2

REV.02 20120703

2SA1036KP/Q/R

DEVICE CHARACTERISTICS

Symbol

Min.

Typ.

Max.

Unit

BVCBO

—

40

—

V

BVCEO

— 32

—

V

BVEBO

— 5

—

V

ICBO

—

— 1

µA

IEBO

—

— 1

µA

VCE(sat)

—

— 0.4

V

hFE

82

—

390

—

fT

—

200

—

MHZ

Cob

—

7

—

pF

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ration

VCB= — 20v

VEB= — 4V

IC/IB= — 100mA/ — 10mA

VCE= — 3V,Ic= — 10mA

Conditions

IC= — 100µA

Ic= — 1mA

IE= — 100µA

VCE= — 5V,IE=20mA,f=100MHz

VCB= — 10V,IE=0A,f=1MHz

Transition frequence

Output capacitance

FElectrical characteristics (Ta = 25_C)

FhFE values are classified as follows.

类似零件编号 - 2SA1036KP

制造商	部件名	数据表	功能描述
Chenmko Enterprise Co. ...	2SA1036KPT	102Kb / 3P	Medium Power PNP Transistor
NXP Semiconductors	2SA1036KPT;TT;SOT-23	75Kb / 12P	Single Zener diodes Rev. 01-1 March 2007

More results

类似说明 - 2SA1036KP

制造商	部件名	数据表	功能描述
Rohm	2SB1132	128Kb / 4P	Medium Power Transistor
Rohm	2SD2143	163Kb / 3P	Medium Power Transistor
Guangdong Kexin Industr...	2SD2537	49Kb / 1P	Medium Power Transistor
	FMMT489	35Kb / 1P	Medium Power Transistor
	2SB1182	39Kb / 1P	Medium Power Transistor
	FMMTL619	37Kb / 2P	Medium Power Transistor
Surge Components	2SB1561U	485Kb / 3P	medium power transistor
Galaxy Semi-Conductor H...	2SD1767	175Kb / 4P	Medium power transistor
Galaxy Semi-Conductor H...	2SB1189	179Kb / 4P	Medium power transistor
Guangdong Kexin Industr...	2SA1036K	38Kb / 1P	Medium Power Transistor
Guangdong Kexin Industr...	2SD1760	40Kb / 1P	Medium Power Transistor