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IRLI2910 数据表(PDF) 2 Page - International Rectifier |
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IRLI2910 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLI2910 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.026 VGS = 10V, ID = 16A ––– ––– 0.030 Ω VGS = 5.0V, ID = 16A ––– ––– 0.040 VGS = 4.0V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 28 ––– ––– S VDS = 50V, ID = 29A ––– ––– 25 VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 140 ID = 29A Qgs Gate-to-Source Charge ––– ––– 20 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 81 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V tr Rise Time ––– 100 ––– ns ID = 29A td(off) Turn-Off Delay Time ––– 49 ––– RG = 1.4Ω, VGS = 5.0V tf Fall Time ––– 55 ––– RD = 1.7Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3700 ––– VGS = 0V Coss Output Capacitance ––– 630 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-SourceLeakageCurrent S D G LD InternalDrainInductance ––– 4.5 ––– LS InternalSourceInductance ––– 7.5 ––– RDS(on) StaticDrain-to-SourceOn-Resistance Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 240 350 ns TJ = 25°C, IF = 29A Qrr Reverse RecoveryCharge ––– 1.8 2.7 µC di/dt = 100A/µs Source-Drain Ratings and Characteristics S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 1.2mH RG = 25Ω, IAS = 29A. (See Figure 12)
t=60s, ƒ=60Hz ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Uses IRL2910 data and test conditions Pulse width ≤ 300µs; duty cycle ≤ 2%. 190 31 pF nH µA A |
类似零件编号 - IRLI2910 |
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类似说明 - IRLI2910 |
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