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2SD2062 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2062 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD2062 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 μ A hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 320 hFE-2 DC Current Gain IC= 4A; VCE= 5V 35 fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V 20 MHz hFE-1 Classifications D E F 60-120 100-200 160-320 |
类似零件编号 - 2SD2062 |
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类似说明 - 2SD2062 |
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