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LB1332D Datasheet(数据表) 2 Page - Sanyo Semicon Device |
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2 page 
Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VIN max 7V Output voltage VOUT –0.3 to +85 V Output current IOUT 1.5 A RD flow-in current IRD 10 mA RD voltage VRD 50 V Allowable power dissipation Pd max LB1662D 1.2 W LB1662M (Independent IC) 0.9 W LB1662M with Specified board* 1.2 W Operating temperature Topr –40 to +80 °C Storage temperature Tstg –55 to +125 °C * Specified board (20 × 30 × 1.5 mm3 glass epoxy resin) Allowable Operating Ranges at Ta=25 °C Parameter Symbol Conditions Ratings Unit Supply voltage range VIN 3.8 to 6.0 V Common-mode input voltage range VICM 0toVIN –1.5 V Electrical Characteristics at Ta=25 °C, VIN = 4.3 V Parameter Symbol Conditions min typ max Unit Output withstand voltage 1 VOR 80 V Output withstand voltage 2 VO(SUS) IO = 0.1 65 V Output saturation voltage VO sat 1 IO = 0.5 A 0.95 1.2 V VO sat 2 IO = 1.0 A 1.15 1.5 V VO sat 3 IO = 1.5 A, VIN = 4.8 V 1.4 2.0 V VIN flow-in range IIN 1.4 2.5 3.7 mA Amp input offset voltage VOFF –7 0 7.0 mV Amp input bias current IBA –250 nA RD output saturation voltage VRD (sat) IRD = 5 mA 0.1 0.2 V C flow-out current IC 1 1.5 2.8 4.1 µA C discharge current IC 2 0.21 0.38 0.61 µA Comparator input threshold voltage VTH 1 0.67 0.7VIN 0.73 V VTH 2 0.34 0.38VIN 0.42 V LB1662D, 1662M No.3416-2/6 |
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