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MLX92212LSE 数据表(PDF) 9 Page - Melexis Microelectronic Systems |
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MLX92212LSE 数据表(HTML) 9 Page - Melexis Microelectronic Systems |
9 / 12 page MLX92212LSE 3-Wire Hall Effect Latch / Switch 390109221203 – REV 2 Page 9 of 12 Oct/13 12 Application Information 12.1 Typical Three-Wire Application Circuit C1 10nF VDD GND OUT RPU 10k VCC VOUT Notes: 1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close as possible to the VDD and ground pin. 2. A capacitor connected to the output is not obligatory, because the output slope is generated internally. MLX92212 12.2 Automotive and Harsh, Noisy Environments Three-Wire Circuit C1 10nF VDD GND OUT C2 4.7nF RPU 10k VCC VOUT R1 100 Ohms Z1 D1 Notes: 1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close as possible to the VDD and ground pin. 2. The device could tolerate negative voltage down to -0.5 V, so if negative transients over supply line VPEAK< -32V are expected, usage of the diode D1 is recommended. Otherwise only R1 is sufficient. When selecting the resistor R1, three points are important: - the resistor has to limit IDD/IDDREV to 40mA maximum - the resistor has to withstand the power dissipated in both over voltage conditions (VR1 2/R1) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD) 3. The device could tolerate positive supply voltage up to +6V (until the maximum power dissipation is not exceeded), so if positive transients over supply line with VPEAK> 6V are expected, usage a zener diode Z1 is recommended. The R1-Z1 network should be sized to limit the voltage over the device below the maximum allowed. MLX92212 |
类似零件编号 - MLX92212LSE |
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类似说明 - MLX92212LSE |
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