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MLX92212LSE 数据表(PDF) 9 Page - Melexis Microelectronic Systems

部件名 MLX92212LSE
功能描述  3-Wire Hall Effect Latch / Switch
Download  12 Pages
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制造商  MELEXIS [Melexis Microelectronic Systems]
网页  http://www.melexis.com
标志 MELEXIS - Melexis Microelectronic Systems

MLX92212LSE 数据表(HTML) 9 Page - Melexis Microelectronic Systems

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MLX92212LSE
3-Wire Hall Effect Latch / Switch
390109221203 – REV 2
Page 9 of 12
Oct/13
12 Application Information
12.1
Typical Three-Wire Application Circuit
C1
10nF
VDD
GND
OUT
RPU
10k
VCC
VOUT
Notes:
1. For proper operation, a 10nF to 100nF bypass capacitor should
be placed as close as possible to the VDD and ground pin.
2. A capacitor connected to the output is not obligatory, because
the output slope is generated internally.
MLX92212
12.2
Automotive and Harsh, Noisy Environments Three-Wire Circuit
C1
10nF
VDD
GND
OUT
C2
4.7nF
RPU
10k
VCC
VOUT
R1
100 Ohms
Z1
D1
Notes:
1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close as possible to the VDD and ground pin.
2. The device could tolerate negative voltage down to -0.5 V, so if negative transients over supply line VPEAK< -32V are expected, usage of
the diode D1 is recommended. Otherwise only R1 is sufficient.
When selecting the resistor R1, three points are important:
- the resistor has to limit IDD/IDDREV to 40mA maximum
- the resistor has to withstand the power dissipated in both over voltage conditions (VR1
2/R1)
- the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD)
3. The device could tolerate positive supply voltage up to +6V (until the maximum power dissipation is not exceeded), so if positive
transients over supply line with VPEAK> 6V are expected, usage a zener diode Z1 is recommended. The R1-Z1 network should be sized to
limit the voltage over the device below the maximum allowed.
MLX92212


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