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BTB04-600B 数据表(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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BTB04-600B 数据表(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 5 page BTB04-600B KERSMI ELECTRONIC CO.,LTD. 600V www.kersemi.com 1 Description This MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-220 Thermal Characteristics Package Marking and Ordering Information Part NO. Marking Package BTB04-600B BTB04-600B TO-220 SYMBOL PARAMETER MAX MAX UNIT ------ BTB04-600B BTB04-600B VDRM Repetitive peak off-state 600 600 V ID RMS on-state current 4 4 A Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 — K/W RƟJA Thermal Resistance, Junction to Ambient1 — |
类似零件编号 - BTB04-600B |
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类似说明 - BTB04-600B |
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