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IRF6218SPBF 数据表(PDF) 2 Page - Infineon Technologies AG

部件名 IRF6218SPBF
功能描述  HEXFET짰 Power MOSFET
Download  9 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

IRF6218SPBF 数据表(HTML) 2 Page - Infineon Technologies AG

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IRF6218SPbF
2
2016-5-26
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.6mH, RG = 25, IAS = -17A
ISD -17A, di/dt -520A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width
300µs; duty cycle  2%.
Ris measured at TJ of approximately 90°C.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to
application note #AN-994.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
–––
V
VGS = 0V, ID = -250µA
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
-0.17 –––
V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
120
150
m
VGS = -10V, ID = -16A 
VGS(th)
Gate Threshold Voltage
-3.0
–––
- 5.0
V
VDS = VGS, ID = -250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
-25
µA
VDS = -120V, VGS = 0V
–––
–––
-250
VDS = -120V,VGS = 0V,TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
nA
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Diode Characteristics  
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
-27
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
-110
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.6
V
TJ = 25°C,IS = -16A,VGS = 0V 
trr
Reverse Recovery Time
–––
150
–––
ns TJ = 25°C ,IF = -16A, VDD = -25V
Qrr
Reverse Recovery Charge
–––
860
–––
nC
di/dt = 100A/µs 
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
11
–––
–––
S
Qg
Total Gate Charge
–––
71
110  
ID = -16A
Qgs
Gate-to-Source Charge
–––
21
–––
nC  VDS = -120V
Qgd
Gate-to-Drain (‘Miller’) Charge
–––
32
–––  
VGS = -10V 
td(on)
Turn-On Delay Time
–––
21
–––
ns
VDD = -75V
tr
Rise Time
–––
70
–––
ID = -16A
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 3.9
tf
Fall Time
–––
30
–––
VGS = -10V 
Ciss
Input Capacitance
–––
2210 –––
pF  
VGS = 0V
Coss
Output Capacitance
–––
370
–––
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
89
–––
ƒ = 1.0MHz
VDS = -50V, ID = -16A
Coss
Output Capacitance
–––
2220 –––
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
340
–––
VGS = 0V, VDS = 0V to -120V
Coss
Output Capacitance
–––
170
–––
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy 
–––
210
mJ
IAR
Avalanche Current 
–––
-16
A


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