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IRF6218SPBF 数据表(PDF) 2 Page - Infineon Technologies AG |
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IRF6218SPBF 数据表(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page IRF6218SPbF 2 2016-5-26 Notes: Repetitive rating; pulse width limited by max. junction temperature. starting TJ = 25°C, L = 1.6mH, RG = 25, IAS = -17A ISD -17A, di/dt -520A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– 120 150 m VGS = -10V, ID = -16A VGS(th) Gate Threshold Voltage -3.0 ––– - 5.0 V VDS = VGS, ID = -250µA IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -120V, VGS = 0V ––– ––– -250 VDS = -120V,VGS = 0V,TJ = 150°C IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– -27 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– -110 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C,IS = -16A,VGS = 0V trr Reverse Recovery Time ––– 150 ––– ns TJ = 25°C ,IF = -16A, VDD = -25V Qrr Reverse Recovery Charge ––– 860 ––– nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Trans conductance 11 ––– ––– S Qg Total Gate Charge ––– 71 110 ID = -16A Qgs Gate-to-Source Charge ––– 21 ––– nC VDS = -120V Qgd Gate-to-Drain (‘Miller’) Charge ––– 32 ––– VGS = -10V td(on) Turn-On Delay Time ––– 21 ––– ns VDD = -75V tr Rise Time ––– 70 ––– ID = -16A td(off) Turn-Off Delay Time ––– 35 ––– RG = 3.9 tf Fall Time ––– 30 ––– VGS = -10V Ciss Input Capacitance ––– 2210 ––– pF VGS = 0V Coss Output Capacitance ––– 370 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 89 ––– ƒ = 1.0MHz VDS = -50V, ID = -16A Coss Output Capacitance ––– 2220 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 340 ––– VGS = 0V, VDS = 0V to -120V Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = -120V, ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 210 mJ IAR Avalanche Current ––– -16 A |
类似零件编号 - IRF6218SPBF |
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类似说明 - IRF6218SPBF |
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