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SI3529DV 数据表(PDF) 2 Page - Vishay Siliconix |
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SI3529DV 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 73455 S09-2277-Rev. C, 02-Nov-09 Vishay Siliconix Si3529DV SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA N-Ch 40 V VGS = 0 V, ID = - 250 µA P-Ch - 40 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA N-Ch 40 mV/°C ID = - 250 µA P-Ch - 40 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA N-Ch - 5.4 ID = - 250 µA P-Ch 3.7 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 1 3 V VDS = VGS, ID = - 250 µA P-Ch - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch 100 nA P-Ch - 100 Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V N-Ch 1 µA VDS = - 40 V, VGS = 0 V P-Ch - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 40 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V N-Ch 10 A VDS = - 5 V, VGS = - 10 V P-Ch - 6 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 2.2 A N-Ch 0.100 0.125 Ω VGS = - 10 V, ID = - 1.7 A P-Ch 0.172 0.215 VGS = 4.5 V, ID = 1.9 A N-Ch 0.130 0.165 VGS = - 4.5 V, ID = - 1.4 A P-Ch 0.268 0.335 Forward Transconductanceb gfs VDS = 15 V, ID = 2.2 A N-Ch 2 S VDS = - 15 V, ID = - 3.6 A P-Ch 1.3 Dynamica Input Capacitance Ciss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 205 pF P-Ch 175 Output Capacitance Coss N-Ch 33 P-Ch 35 Reverse Transfer Capacitance Crss N-Ch 17 P-Ch 21 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 2.25 A N-Ch 4.6 7.0 nC VDS = - 20 V, VGS = - 10 V, ID = - 1.7 A P-Ch 4.8 7.2 N-Channel VDS = 20 V, VGS = 4.5 V, ID = 2.25 A P-Channel VDS = - 20 V, VGS = - 4.5 V, ID = - 1.8 A N-Ch 2.2 3.3 P-Ch 2.3 3.5 Gate-Source Charge Qgs N-Ch 1.0 P-Ch 0.8 Gate-Drain Charge Qgd N-Ch 0.9 P-Ch 1.1 Gate Resistance Rg f = 1 MHz N-Ch 2.7 4.1 Ω P-Ch 12.0 |
类似零件编号 - SI3529DV |
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类似说明 - SI3529DV |
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