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CAT25020VI-G 数据表(PDF) 6 Page - ON Semiconductor

部件名 CAT25020VI-G
功能描述  1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM
Download  15 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

CAT25020VI-G 数据表(HTML) 6 Page - ON Semiconductor

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CAT25010, CAT25020, CAT25040
www.onsemi.com
6
Table 10. STATUS REGISTER
7
6
5
4
3
2
1
0
1
1
1
1
BP1
BP0
WEL
RDY
Table 11. BLOCK PROTECTION BITS
Status Register Bits
Array Address Protected
Protection
BP1
BP0
0
0
None
No Protection
0
1
CAT25010: 060−07F, CAT25020: 0C0−0FF, CAT25040: 180−1FF
Quarter Array Protection
1
0
CAT25010: 040−07F, CAT25020: 080−0FF, CAT25040: 100−1FF
Half Array Protection
1
1
CAT25010: 000−07F, CAT25020: 000−0FF, CAT25040: 000−1FF
Full Array Protection
WRITE OPERATIONS
The CAT25010/20/40 device powers up into a write
disable state. The device contains a Write Enable Latch
(WEL) which must be set before attempting to write to the
memory array or to the status register. In addition, the
address of the memory location(s) to be written must be
outside the protected area, as defined by BP0 and BP1 bits
from the status register.
Write Enable and Write Disable
The internal Write Enable Latch and the corresponding
Status Register WEL bit are set by sending the WREN
instruction to the CAT25010/20/40. Care must be taken to
take the CS input high after the WREN instruction, as
otherwise the Write Enable Latch will not be properly set.
WREN timing is illustrated in Figure 3. The WREN
instruction must be sent prior to any WRITE or WRSR
instruction.
The internal write enable latch is reset by sending the
WRDI instruction as shown in Figure 4. Disabling write
operations by resetting the WEL bit, will protect the device
against inadvertent writes.
Figure 3. WREN Timing
SCK
SI
SO
00
0
0
0
11
0
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
CS
Figure 4. WRDI Timing
SCK
SI
SO
0
0
000
10
0
HIGH IMPEDANCE
Dashed Line = mode (1, 1)
CS


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类似说明 - CAT25020VI-G

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