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LM185-25 数据表(PDF) 4 Page - National Semiconductor (TI) |
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LM185-25 数据表(HTML) 4 Page - National Semiconductor (TI) |
4 / 13 page Electrical Characteristics LM185-2.5 LM185BX-2.5 LM385B-2.5 LM185BY-2.5 LM385BX-2.5 LM385-2.5 Units LM285-2.5 LM385BY-2.5 (Limit) Parameter Conditions Typ LM285BX-2.5 LM285BY-2.5 Tested Design Tested Design Tested Design Limit Limit Limit Limit Limit Limit (Note 5) (Note 8) (Note 6) (Note 5) (Note 6) (Note 5) (Note 6) Reverse Breakdown T A = 25˚C, 2.5 2.462 2.462 2.425 V(Min) Voltage 20 µA ≤ I R ≤ 20 mA 2.538 2.538 2.575 V(Max) Minimum Operating Current 13 20 30 20 30 20 30 µA (Max) LM385M3-2.5 15 20 Reverse Breakdown Voltage Change with Current 20 µA ≤ I R ≤ 1 mA 1 1.5 2.0 2.5 2.0 2.5 mV (Max) 1mA ≤ I R ≤ 20 mA 10 20 20 25 20 25 mV (Max) Reverse Dynamic I R = 100 µA, 1 Ω Impedance f = 20 Hz Wideband Noise (rms) I R = 100 µA, 120 µV 10 Hz ≤ f ≤ 10 kHz Long Term Stability I R = 100 µA, T = 1000 Hr, 20 ppm T A = 25˚C ±0.1˚C Average Temperature I R = 100 µA Coefficient (Note 7) X Suffix 30 30 ppm/˚C Y Suffix 50 50 ppm/˚C All Others 150 150 150 ppm/˚C (Max) Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: Refer to RETS185H-2.5 for military specifications. Note 3: For elevated temperature operation, TJ MAX is: LM185 150˚C LM285 125˚C LM385 100˚C Thermal Resistance TO-92 TO-46 SO-8 SOT-23 θ ja (Junction to Ambient) 180˚C/W (0.4" Leads) 440˚C/W 165˚C/W 283˚C/W 170˚C/W (0.125" Leads) θ jc (Junction to Case) N/A 80˚C/W N/A N/A www.national.com 4 |
类似零件编号 - LM185-25 |
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类似说明 - LM185-25 |
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