BD242A datasheet(1/2 Pages) ISC

部件名	BD242A

功能描述	isc Silicon PNP Power Transistor

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

BD242/A/B/C

DESCRIPTION

·

DC Current Gain -hFE = 25(Min)@ IC= -1.0A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A

-80V(Min)- BD242B; -100V(Min)- BD242C

·

Complement to Type BD241/A/B/C

APPLICATIONS

·

Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

BD242

-55

V

BD242A

-70

BD242B

-90

BD242C

-115

VCEO

Collector-Emitter Voltage

BD242

-45

V

BD242A

-60

BD242B

-80

BD242C

-100

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3.0

A

ICM

Collector Current-Peak

-5.0

A

IB

Base Current

-1.0

A

PC

Collector Power Dissipation

@ TC=25℃

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.125

℃

/W

类似零件编号 - BD242A

制造商	部件名	数据表	功能描述
Mospec Semiconductor	BD242A	133Kb / 3P	POWER TRANSISTORS(3A,40W)
Savantic, Inc.	BD242A	92Kb / 3P	Silicon NPN Power Transistors
Power Innovations Ltd	BD242A	87Kb / 6P	PNP SILICON POWER TRANSISTORS
New Jersey Semi-Conduct...	BD242A	90Kb / 2P	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
STMicroelectronics	BD242A	66Kb / 4P	COMPLEMENTARY SILICON POWER TRANSISTORS June 1997

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