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2SD1899 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SD1899
功能描述  isc Silicon NPN Power Transistor
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SD1899 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SD1899
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)NOTE
Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA
0.25
V
VBE(sat)NOTE
Base-Emitter Saturation Voltage
IC= 1.5A; IB= 150mA
1.2
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
10
μ
A
hFE-1NOTE
DC Current Gain
IC= 0.2A; VCE= 2V
60
hFE-2NOTE
DC Current Gain
IC= 0.6A; VCE= 2V
100
400
hFE-3NOTE
DC Current Gain
IC= 2A; VCE= 2V
50
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
30
pF
fT
Current-Gain—Bandwidth Product
IC= 1.5A; VCE= 5V
120
MHz
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
hFE-2 Classifications
M
L
K
100-200
160-320 200-400


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