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MC100EP16VADTR2G 数据表(PDF) 3 Page - ON Semiconductor |
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MC100EP16VADTR2G 数据表(HTML) 3 Page - ON Semiconductor |
3 / 11 page MC10EP16VA, MC100EP16VA www.onsemi.com 3 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC PECL Mode Power Supply VEE = 0 V 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V VI ≤ VCC VI ≥ VEE 6 −6 V Iout Output Current Continuous Surge 50 100 mA IBB VBB Sink/Source ±0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm TSSOP−8 TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C qJC Thermal Resistance (Junction-to-Case) (Note 2) DFN8 35 to 40 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) Table 4. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 36 22 30 38 24 32 40 mA VOH Output HIGH Voltage (Note 2) 2165 2240 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1460 1755 1490 1815 mV VBB Output Voltage Reference 1790 1950 1990 1855 2000 2055 1915 2040 2115 mV VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 3) 2.0 3.3 2.0 3.3 2.0 3.3 V IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. |
类似零件编号 - MC100EP16VADTR2G |
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类似说明 - MC100EP16VADTR2G |
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