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BTA10-800CRG 数据表(PDF) 4 Page - STMicroelectronics |
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BTA10-800CRG 数据表(HTML) 4 Page - STMicroelectronics |
4 / 7 page BTA10 and BTB10 Series 4/7 Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) Figure 9: Relative variation of critical rate of decrease of main current versus junction temperature 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 I (A) TSM Number of cycles t=20ms One cycle Non repetitive T initial=25°C j Repetitive T =95°C C 0.01 0.10 1.00 10.00 10 100 1000 I (A), I t (A s) TSM 22 t (ms) p T initial=25°C j ITSM I t 2 dI/dt limitation: 50A/µs -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 T (°C) j I,I ,I [T ] / GT H L j I ,I ,I [T =25°C] GT H L j IGT IH & IL 0.1 1.0 10.0 100.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c BW/CW C B 0 25 50 75 100 125 0 1 2 3 4 5 6 (dI/dt)c [T ] / pecified] j (dI/dt)c [T s j T (°C) j |
类似零件编号 - BTA10-800CRG |
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类似说明 - BTA10-800CRG |
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