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KTD3055 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KTD3055 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor KTD3055 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μ A hFE DC Current Gain IC= 1A ; VCE= 5V 55 160 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 170 pF fT Current Gain-Bandwidth Product IC= 1A ; VCE= 5V 12 MHz hFE Classifications R O 55-110 80-160 |
类似零件编号 - KTD3055 |
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类似说明 - KTD3055 |
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