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IRLMS1902 数据表(PDF) 2 Page - International Rectifier |
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IRLMS1902 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLMS1902 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-SourceBreakdownVoltage 20 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.032 V/°C Reference to 25°C, ID = 1mA 0.10 VGS = 4.5V, ID = 2.2A 0.17 VGS = 2.7V, ID = 1.1A VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA gfs ForwardTransconductance 3.2 S VDS = 10V, ID = 1.1A 1.0 VDS = 16V, VGS = 0V 25 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-SourceForwardLeakage 100 VGS = 12V Gate-to-SourceReverseLeakage -100 VGS = -12V Qg TotalGateCharge 4.7 7.0 ID = 2.2A Qgs Gate-to-SourceCharge 0.97 1.5 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge 1.8 2.6 VGS = 4.5V, See Fig. 6 and 9 td(on) Turn-On Delay Time 7.0 VDD = 10V tr Rise Time 11 ID = 2.2A td(off) Turn-Off Delay Time 12 RG = 6.0Ω tf Fall Time 4.0 RD = 4.4Ω, See Fig. 10 Ciss InputCapacitance 300 VGS = 0V Coss OutputCapacitance 120 pF VDS = 15V Crss Reverse Transfer Capacitance 50 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) StaticDrain-to-SourceOn-Resistance IDSS Drain-to-SourceLeakageCurrent nA ns Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent MOSFET symbol (BodyDiode) showing the ISM PulsedSourceCurrent integralreverse (Body Diode) p-n junction diode. VSD DiodeForwardVoltage 1.2 V TJ = 25°C, IS = 2.2A, VGS = 0V trr ReverseRecoveryTime 40 60 ns TJ = 25°C, IF = 2.2A Qrr ReverseRecoveryCharge 37 55 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 18 1.7 S D G Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.2A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. |
类似零件编号 - IRLMS1902 |
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类似说明 - IRLMS1902 |
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