STK531U369A-E

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Electrical Characteristics at Tc = 25

C, VD1, VD2, VD3, VD4 = 15V

Parameter

Symbol

Conditions

Test

circuit

MIN

TYP

MAX

Unit

Power output section

Collector-emitter cut-off current

ICE

VCE = 600V

Fig.1

-

-

0.1

mA

Bootstrap diode reverse current

IR(BD)

VR(BD) = 600V

-

-

0.1

mA

Collector to emitter saturation voltage

VCE(SAT)

Ic = 10A

Tj = 25

C

Upper side

Fig.2

-

1.9

2.4

V

Lower side *1

-

2.2

2.7

Ic = 5A

Tj = 100

C

Upper side

-

1.5

-

Lower side *1

-

1.7

-

Diode forward voltage

VF

IF = 10A

Tj = 25

C

Upper side

Fig.3

-

1.8

2.1

V

Lower side *1

-

2.1

2.4

IF = 5A

Tj = 100

C

Upper side

-

1.4

-

Lower side *1

-

1.6

-

Junction to case

thermal resistance

θj-c(T)

IGBT

-

-

-

4.0

C/W

θj-c(D)

FWD

-

-

6.0

Control (Pre-driver) section

Pre-driver current consumption

ID

VD1, 2, 3 = 15V

Fig.4

-

0.08

0.4

mA

VD4 = 15V

-

1.6

4.0

High level Input voltage

Vin H

HIN1, HIN2, HIN3,

LIN1, LIN2, LIN3 to VSS

2.5

-

-

V

Low level Input voltage

Vin L

-

-

0.8

V

Input threshold voltage hysteresis

*2

Vinth(hys)

0.5

0.8

-

V

Logic 1 input leakage current

IIN+

VIN = +3.3V

-

100

143

µA

Logic 0 input leakage current

IIN

VIN = 0V

-

-

2

µA

FAULT terminal sink current

IoSD

FAULT : ON / VFAULT = 0.1V

-

2

-

mA

FAULT clear time

FLTCLR

Fault output latch time

18

-

80

ms

VCC and VS undervoltage positive

going threshold

10.5

11.1

11.7

V

VCC and VS undervoltage negative

going threshold

10.3

10.9

11.5

V

VCC and VS undervoltage hysteresis

0.14

0.2

-

V

Over current protection level

ISD

PW = 100μs, RSD = 0Ω

Fig.5

18.1

-

22.9

A

Electric current output signal level

ISO

Io = 10A

-

0.31

0.33

0.35

V

Reference voltage is “VSS” terminal voltage unless otherwise specified.

*1 : The lower side’s VCE(SAT) and VF include a loss by the shunt resistance

*2 : Input threshold voltage hysteresis indicates a reference value based on the design value of built-in pre-driver IC

Electrical Characteristics at Tc

 25C, VD1, VD2, VD3, VD4 = 15V, VCC = 300V, L = 3.9mH

Parameter

Symbol

Conditions

Test

circuit

MIN

TYP

MAX

Unit

Switching time

tON

Io = 10A

Fig.6

0.3

0.5

1.2

µs

tOFF

-

0.8

1.5

Turn-on switching loss

Eon

Io = 5A

-

200

-

µJ

Turn-off switching loss

Eoff

-

130

-

µJ

Total switching loss

Etot

-

330

-

µJ

Turn-on switching loss

Eon

Io = 5A, Tc = 100

C

-

240

-

µJ

Turn-off switching loss

Eoff

-

130

-

µJ

Total switching loss

Etot

-

370

-

µJ

Diode reverse recovery energy

Erec

IF = 5A, P = 400V, Tc = 100

C

-

17

-

µJ

Diode reverse recovery time

trr

-

62

-

ns

Reverse bias safe operating area

RBSOA

Io = 20A, VCE = 450V

Full square

Short circuit safe operating area

SCSOA

VCE = 400V, Tc = 100C

4

-

-

µs

Reference voltage is “VSS” terminal voltage unless otherwise specified.

Notes:

1. The pre-drive power supply low voltage protection has approximately 0.2V of hysteresis and operates as follows.

Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue till the

input signal will turn ‘high’.

Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal voltage.

2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating malfunction.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.