BF1205C datasheet(4/22 Pages) PHILIPS

部件名	BF1205C

功能描述	Dual N-channel dual gate MOS-FET

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

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4 / 22 page

9397 750 13005

Product data sheet

Rev. 01 — 18 May 2004

4 of 22

Philips Semiconductors

BF1205C

Dual N-channel dual gate MOS-FET

7.

Static characteristics

[1]

RG1 connects gate 1 (b) to VGG = 0 V (see Figure 3).

[2]

RG1 connects gate 1 (b) to VGG = 5 V (see Figure 3).

Fig 1.

Power derating curve.

Ts (°C)

0

200

150

50

100

001aaa551

100

150

50

200

250

Ptot

(mW)

0

Table 7:

Static characteristics

Tj =25 °C.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

Per MOS-FET; unless otherwise speciﬁed

V(BR)DSS

drain-source breakdown voltage

VG1-S =VG2-S =0V; ID =10 µA

ampliﬁer a

6

-

V

ampliﬁer b

6

-

V

V(BR)G1-SS

gate 1-source breakdown voltage

VGS =VDS =0V; IG1-S =10mA

6

-

10

V

V(BR)G2-SS

gate 2-source breakdown voltage

VGS =VDS =0V; IG2-S =10mA

6

-

10

V

V(F)S-G1

forward source-gate 1 voltage

VG2-S =VDS =0V; IS-G1 = 10 mA

0.5

-

1.5

V

V(F)S-G2

forward source-gate 2 voltage

VG1-S =VDS =0V; IS-G2 = 10 mA

0.5

-

1.5

V

VG1-S(th)

gate 1-source threshold voltage

VDS =5V; VG2-S =4V; ID = 100 µA

0.3

-

1.0

V

VG2-S(th)

gate 2-source threshold voltage

VDS =5V; VG1-S =5V; ID = 100 µA

0.4

-

1.0

V

IDSX

drain-source current

VG2-S =4V; VDS(b) =5V; RG1 = 150 kΩ

ampliﬁer a; VDS(a) =5V

[1] 14

-

24

mA

ampliﬁer b

[2] 9

-

17

mA

IG1-S

gate1 cut-off current

VG2-S =VDS(a) =0V

ampliﬁer a; VG1-S(a) =5V; ID(b) = 0 A

-

50

nA

ampliﬁer b; VG1-S(b) =5V; VDS(b) = 0 V

-

50

nA

IG2-S

gate 2 cut-off current

VG2-S =4V;

VG1-S(a) =VDS(a) =VDS(b) =0V;

VG1-S(b) =0V;

-

20

nA

类似零件编号 - BF1205C

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Quanzhou Jinmei Electro...	BF1205C	179Kb / 22P	Dual N-channel dual gate MOS-FET
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类似说明 - BF1205C

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