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BF1205 数据表(PDF) 8 Page - NXP Semiconductors |
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BF1205 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 24 page 2003 Sep 30 8 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 handbook, halfpage 0 ID (mA) 420 40 30 10 0 20 812 16 MGX434 yfs (mS) (5) (4) (3) (2) (1) Fig.7 Forward transfer admittance as a function of drain current; typical values; amplifier a. VDS (a) = 5 V; VG1-S (b) = VDS (b) = 0 V; Tj =25 °C. (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. handbook, halfpage 010 20 40 12 0 30 ID (b) (µA) ID (a) (mA) 8 4 MGX435 Fig.8 Drain current as a function of internal G1 current (current in pin drain (b) if MOS-FET (b) is switched off); typical values; amplifier a. VDS (a) = 5 V; VG2-S = 4 V; VDS (b) = 5 V; VG1-S (b) = 0 V; Tj =25 °C. |
类似零件编号 - BF1205 |
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类似说明 - BF1205 |
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