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CS8190EDWFR20G 数据表(PDF) 2 Page - ON Semiconductor |
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CS8190EDWFR20G 数据表(HTML) 2 Page - ON Semiconductor |
2 / 11 page CS8190 http://onsemi.com 2 BIAS CP+ SQOUT FREQIN COS+ Charge Pump Voltage Regulator SINE− High Voltage Protection VREG F/VOUT CP− VREG GND SINE+ Figure 1. Block Diagram - + - + - + - + 7.0 V GND GND GND + - - + Func. Gen. COS− COS Output VCC SINE Output Input Comp. ABSOLUTE MAXIMUM RATINGS Rating Value Unit Supply Voltage, VCC < 100 ms Pulse Transient Continuous 60 24 V V Operating Temperature −40 to +105 °C Storage Temperature −40 to +165 °C Junction Temperature −40 to +150 °C ESD (Human Body Model) 4.0 kV Lead Temperature Soldering: Wave Solder (through hole styles only) (Note 1) Reflow: (SMD styles only) (Note 2) 260 peak 230 peak °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 10 seconds maximum. 2. 60 second maximum above 183°C. |
类似零件编号 - CS8190EDWFR20G |
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类似说明 - CS8190EDWFR20G |
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