SI8402DB-T1 datasheet(1/6 Pages) VISHAY

部件名	SI8402DB-T1

功能描述	20-V N-Channel 1.8-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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FEATURES

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APPLICATIONS

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Si8402DB

Vishay Siliconix

New Product

Document Number: 72657

S-32557—Rev. A, 15-Dec-03

www.vishay.com

1

20-V N-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.037 @ VGS = 4.5 V

7.3

20

0.039 @ VGS = 2.5 V

7.1

0.043 @ VGS = 1.8 V

6.8

MICRO FOOT

32

41

S

DD

G

Bump Side View

Backside View

Device Marking: 8402

xxx = Date/Lot Traceability Code

8402

xxx

G

S

D

N-Channel MOSFET

Ordering Information: Si8402DB-T1

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

7.3

5.3

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

5.9

4.3

A

Pulsed Drain Current

IDM

30

A

continuous Source Current (Diode Conduction)a

IS

2.3

1.2

Maximum Power Dissipationa

TA = 25_C

PD

2.77

1.47

W

Maximum Power Dissipationa

TA = 70_C

PD

1.77

0.94

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

Package Reflow Conditionsb

VPR

215

_C

Package Reflow Conditionsb

IR/Convection

220

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

35

45

Maximum Junction-to-Ambienta

Steady State

RthJA

72

85

_C/W

Maximum Junction-to-Foot (drain)

Steady State

RthJF

16

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.

类似零件编号 - SI8402DB-T1

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI8402DB-T1-E1	208Kb / 10P	20-V N-Channel 1.8-V (G-S) MOSFET Rev. C, 08-Sep-08

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类似说明 - SI8402DB-T1

制造商	部件名	数据表	功能描述
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