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SI8402DB-T1 数据表(PDF) 1 Page - Vishay Siliconix |
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SI8402DB-T1 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 6 page FEATURES D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D PA, Battery and Load Switch for Portable Devices Si8402DB Vishay Siliconix New Product Document Number: 72657 S-32557—Rev. A, 15-Dec-03 www.vishay.com 1 20-V N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = 4.5 V 7.3 20 0.039 @ VGS = 2.5 V 7.1 0.043 @ VGS = 1.8 V 6.8 MICRO FOOT 32 41 S DD G Bump Side View Backside View Device Marking: 8402 xxx = Date/Lot Traceability Code 8402 xxx G S D N-Channel MOSFET Ordering Information: Si8402DB-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 7.3 5.3 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 5.9 4.3 A Pulsed Drain Current IDM 30 A continuous Source Current (Diode Conduction)a IS 2.3 1.2 Maximum Power Dissipationa TA = 25_C PD 2.77 1.47 W Maximum Power Dissipationa TA = 70_C PD 1.77 0.94 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 Package Reflow Conditionsb VPR 215 _C Package Reflow Conditionsb IR/Convection 220 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 5 sec R 35 45 Maximum Junction-to-Ambienta Steady State RthJA 72 85 _C/W Maximum Junction-to-Foot (drain) Steady State RthJF 16 20 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. |
类似零件编号 - SI8402DB-T1 |
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类似说明 - SI8402DB-T1 |
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