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SI7336DP 数据表(PDF) 2 Page - Vishay Siliconix |
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SI7336DP 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7336DP Vishay Siliconix www.vishay.com 2 Document Number: 72415 S-41795—Rev. C, 04-Oct-04 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 25 A 0.0026 0.00325 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 19 A 0.0033 0.0042 W Forward Transconductancea gfs VDS = 15 V, ID = 25 A 110 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 V Dynamicb Input Capacitance Ciss 5600 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 860 pF Reverse Transfer Capacitance Crss DS , GS , 415 p Total Gate Charge Qg 36 50 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A 18 nC Gate-Drain Charge Qgd DS , GS , D 10 Gate Resistance Rg 0.8 1.3 2.0 W Turn-On Delay Time td(on) 24 35 Rise Time tr VDD = 15 V, RL = 15 W 16 25 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 90 140 ns Fall Time tf g 32 50 ns Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 45 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 0 2468 10 VGS = 10 thru 4 V 25_C TC = 125_C −55_C 3 V Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) |
类似零件编号 - SI7336DP |
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类似说明 - SI7336DP |
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