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IRLML5103 数据表(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

部件名 IRLML5103
功能描述  Power MOSFET
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制造商  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
网页  http://www.hottech.net.cn/
标志 HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

IRLML5103 数据表(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

  IRLML5103 Datasheet HTML 1Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML5103 Datasheet HTML 2Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML5103 Datasheet HTML 3Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. IRLML5103 Datasheet HTML 4Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.  
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Power MOSFET
VDSS = -30V
RDS(on) = 0.60Ω
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
l
Lead-Free
l
Halogen-Free
S
D
G
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-0.76
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-0.61
A
IDM
Pulsed Drain Current 
-4.8
PD@TA = 25°C
Power Dissipation
540
mW
Linear Derating Factor
4.3
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt ‚
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
„
–––
230
Thermal Resistance
°C/W
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.029 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.60
VGS = -10V, ID = -0.60A ƒ
––– ––– 1.0
VGS = -4.5V, ID = -0.30A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 ––– –––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.44 ––– –––
S
VDS = -10V, ID = -0.30A
––– ––– -1.0
VDS = -24V, VGS = 0V
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 3.4
5.1
ID = -0.60A
Qgs
Gate-to-Source Charge
––– 0.52 0.78
nC
VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 1.1
1.7
VGS = -10V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
–––
10
–––
VDD = -15V
tr
Rise Time
––– 8.2 –––
ID = -0.60A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 6.2Ω
tf
Fall Time
–––
16
–––
RD = 25Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
–––
75
–––
VGS = 0V
Coss
Output Capacitance
–––
37
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
18
–––
ƒ = 1.0MHz, See Fig. 5
µA
nA
ns
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(ON)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Page:P4 -P1
Plastic-Encapsulate Mosfets
GUANGDONG
HOTTECH
INDUSTRIAL
CO., LTD.
IRLML5103
Marking: DK
l


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