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SI2302 数据表(PDF) 3 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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SI2302 数据表(HTML) 3 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
3 / 3 page Page:P3-P3 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 10 0 10 1 0.2 0.4 0.6 0.8 10 -1 1.2 1.0 V GS=0V Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area 5 4 3 2 1 0 0246 V DS=10V I D=3.6A 10 1 10 0 10 -1 10 1 10 0 10 -1 10 2 10 -2 1s 100ms 10ms DC 1ms R DS(ON)Limit Single Pulse T A=25 C T J=150 C Typical Characteristics SI2302 |
类似零件编号 - SI2302 |
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类似说明 - SI2302 |
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