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AM90N07-04B 数据表(PDF) 1 Page - Analog Power |
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AM90N07-04B 数据表(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM90N07-04B N-Channel 75-V (D-S) MOSFET VDS (V) ID (A) Symbol Limit Units VDS 75 VGS ±20 Continuous Drain Current a TC=25°C ID 90 IDM 240 IS 110 A Power Dissipation a TC=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A PRODUCT SUMMARY 75 rDS(on) (mΩ) 5.8 @ VGS = 10V 7.3 @ VGS = 4.5V Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage 90 a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools © Preliminary 1 Publication Order Number: DS_AM90N07-04B_1A |
类似零件编号 - AM90N07-04B |
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类似说明 - AM90N07-04B |
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