2008. 9. 23

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SEMICONDUCTOR

TECHNICAL DATA

KTX213E

Revision No : 1

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

Including two devices in TES6.

(Thin Extreme Super mini type with 6 leads.)

With Built-in bias resistors.

Simplify circuit design.

Reduce a quantity of parts and manufacturing process.

DIM MILLIMETERS

A

A1

B1

C

TES6

1.6 0.05

1.0 0.05

1.6 0.05

1.2 0.05

0.50

0.2 0.05

0.5 0.05

0.12 0.05

B

D

H

J

B1

B

1

2

3

6

4

P

P

P5

5

+_

+_

+_

+_

+_

+_

+_

1. Q (EMITTER)

4. Q COMMON (EMITTER)

3. Q OUT (COLLECTOR)

5. Q IN (BASE)

6. Q (COLLECTOR)

1

2

2. Q (BASE)

1

1

2

2

EQUIVALENT CIRCUIT

Q1 MAXIMUM RATING (Ta=25

)

E

C

B

R1

R2

COMMON

OUT

2

IN

Q

R1=47KΩ

R2=47KΩ

1

Q1

23

65

4

Q2

EQUIVALENT CIRCUIT (TOP VIEW)

* Total Raing.

BH

123

4

5

6

Lot No.

Type Name

Q2 MAXIMUM RATING (Ta=25

)

Q1, Q2 MAXIMUM RATING (Ta=25

)

Marking

EPITAXIAL PLANAR PNP/NPN TRANSISTOR

* Single pulse Pw=1mS.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

-15

V

Collector-Emitter Voltage

-12

V

Emitter-Base Voltage

-6

V

Collector Current

-500

-1

CHARACTERISTIC

SYMBOL

RATING

UNIT

Output Voltage

50

V

Input Voltage

40, -10

V

Output Current

100

CHARACTERISTIC

SYMBOL

RATING

UNIT

Power Dissipation

200

Junction Temperature

150

Storage Temperature Range

-55

150