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TDA8359J 数据表(PDF) 5 Page - NXP Semiconductors

部件名 TDA8359J
功能描述  Full bridge vertical deflection output circuit in LVDMOS
Download  20 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

TDA8359J 数据表(HTML) 5 Page - NXP Semiconductors

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2002 Jan 21
5
Philips Semiconductors
Product specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8359J
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. When the voltage at pin OUTA supersedes 70 V the circuit will limit the voltage.
2. At Tj(max).
3. Equivalent to 200 pF capacitance discharge through a 0
Ω resistor.
4. Equivalent to 100 pF capacitance discharge through a 1.5 k
Ω resistor.
5. Internally limited by thermal protection at Tj = 170 °C.
THERMAL CHARACTERISTICS
In accordance with IEC 60747-1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VP
supply voltage
18
V
VFB
flyback supply voltage
68
V
Vn
DC voltage
pin OUTA
note 1
68
V
pin OUTB
VP
V
pins INA, INB, GUARD and FEEDB
−0.5
VP
V
In
DC current
pins OUTA and OUTB
during scan (p-p)
3.2
A
pins OUTA and OUTB
at flyback (peak); t
≤ 1.5 ms
−±1.8
A
pins INA, INB, GUARD and FEEDB
−20
+20
mA
Ilu
latch-up current
current into any pin; pin voltage is
1.5
× VP; note 2
−+200
mA
current out of any pin; pin voltage is
−1.5 × V
P; note 2
−200
mA
Ves
electrostatic handling voltage
machine model; note 3
−500
+500
V
human body model; note 4
−5000
+5000
V
Ptot
total power dissipation
10
W
Tstg
storage temperature
−55
+150
°C
Tamb
ambient temperature
−25
+85
°C
Tj
junction temperature
note 5
150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth(j-c)
thermal resistance from junction to case
3
K/W
Rth(j-a)
thermal resistance from junction to ambient
in free air
65
K/W


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