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LC898123F40XC-VH 数据表(PDF) 9 Page - ON Semiconductor |
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LC898123F40XC-VH 数据表(HTML) 9 Page - ON Semiconductor |
9 / 11 page LC898123F40XC www.onsemi.com 9 9. AC Characteristics 9-1 Power Sequence Item Symbol Min Typ Max Units Rise time tR 3 ms Wait time tW 100 ms Bottom Voltage Vbot 0.2 V Injection order between AVDD30 and VM is below. AVDD30 VM VM ≦ AVDD30 + 0.5V (VM ≦ 3.3V) 2.6V 2.6V tVMrd ≧ 0ms tAVfd ≧0ms WPB tAVfd tVMrd WPB must be open or pulled down normally. When Flash is erased or programmed, WPB must be held High. SDA, SCL, EXCLK, and WPB will tolerate 3 V input at the time of power off. Power must remain applied to the device during flash access in order to prevent unintentional rewriting of the flash memory. Data in flash memory may be rewritten unintentionally if the specified power sequencing techniques are not kept. |
类似零件编号 - LC898123F40XC-VH |
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类似说明 - LC898123F40XC-VH |
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