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TPIC0107BDWP 数据表(PDF) 5 Page - Texas Instruments |
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TPIC0107BDWP 数据表(HTML) 5 Page - Texas Instruments |
5 / 15 page TPIC0107B PWM CONTROL INTELLIGENT HBRIDGE SLIS067A − NOVEMBER 1998 − REVISED APRIL 2002 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating case temperature and supply voltage ranges (unless otherwise noted) (see Note 2) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TJ = 25°C VCC = 6 V to 9 V 380 LSD TJ = 25°C VCC = 9 V to 18 V 280 340 m Ω LSD TJ = 150°C VCC = 6 V to 9 V 620 m Ω rDS(on) Static drain-source on-resistance TJ = 150°C VCC = 9 V to 18 V 400 560 rDS(on) Static drain-source on-resistance (per transistor) IBR = 1 A TJ = 25°C VCC = 6 V to 9 V 430 (per transistor) IBR = 1 A HSD TJ = 25°C VCC = 9 V to 18 V 280 340 m Ω HSD TJ = 150°C VCC = 6 V to 9 V 640 m Ω TJ = 150°C VCC = 9 V to 18 V 400 560 I(QCD) Open circuit detection current 10 40 100 mA TSDS Static thermal shutdown temperature See Notes 3 and 4 140 °C TSDD Dynamic thermal shutdown temperature See Notes 3 and 5 160 °C ICS Current shutdown limit VCC = 6 V to 9 V 4.8 7.5 A ICS Current shutdown limit VCC = 9 V to 18 V 5 7.5 A I(CON) Continuous bridge current TJ = 125°C, Operating lifetime 10,000 hours, (see Figure 1) 3 A V(OVCC) Over voltage detection on VCC 27 36 V V(STL) STATUS low output voltage IO = 100 µA 0.8 V V(ST2H) STATUS2 high output voltage IO = 20 µA 3.9 5.4 V I(ST(OFF)) STATUS output leakage current V(ST) = 5 V 5 µA VIL Low level logic input voltage −0.3 0.8 V VIH High level logic input voltage 3.6 7 V ∆VI Hysteresis of input voltage 0.3 V IIH High level logic input current VIH = 3.5 V 2 10 50 µA NOTES: 2. The device functions according to the function table for VCC between 18 V and V(OVCC), but only up to a maximum supply voltage of 33 V (no parameters specified). Exposure beyond 18 V for extended periods may affect device reliability. 3. Exposure beyond absolute-maximum-rated condition of junction temperature may affect device reliability. 4. No temperature gradient between DMOS transistor and temperature sensor. 5. With temperature gradient between DMOS transistor and temperature sensor in a typical application (DMOS transistor as heat source). switching characteristics over recommended operating case temperature and supply voltage ranges (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tout(on) High-side driver turn-on time VDS(on)<1 V at 1 A, VCC = 13.2 V 100 s tout(on) Low-side driver turn-on time VDS(on)<1 V at 1 A, VCC = 13.2 V 100 µs SR Slew rate, low-to-high sinusoidal ( δV/δt) VCC = 13.2 V, IO = 1 A resistive load 1 6 V/ s SR Slew rate, high-to-low sinusoidal ( δV/δt) VCC = 13.2 V, IO = 1 A resistive load 1 6 V/ µs td(QCD) Under current spike duration to trigger open circuit detection VCC = 5 V to 18 V 1 10 ms td(CS) Delay time for over current shutdown 5 10 25 µs thermal resistance PARAMETER MIN MAX UNIT RθJA Junction-to-ambient thermal resistance 97 °C/W RθJC Junction-to-case thermal resistance 5 °C/W |
类似零件编号 - TPIC0107BDWP |
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类似说明 - TPIC0107BDWP |
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