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TPD3S014DBVR 数据表(PDF) 6 Page - Texas Instruments

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部件名 TPD3S014DBVR
功能描述  Current Limit Switch and D/D??ESD Protection for USB Host Ports
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TPD3S014DBVR 数据表(HTML) 6 Page - Texas Instruments

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TPD3S014, TPD3S044
SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
www.ti.com
7.6 Electrical Characteristics: –40°C
≤ T
J ≤ 125°C
Unless otherwise noted: 4.5 V
≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C. See the Device
Comparison Table for the rated current of each part number.
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
POWER SWITCH
TPD3S014
97
154
RDS(on)
Input – output resistance
m
Ω
TPD3S044
74
121
ENABLE INPUT (EN)
Threshold
Input rising
1
1.45
2
V
Hysteresis
0.13
V
Leakage current
VEN = 0 V
–1
0
1
µA
VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑
tON
Turn on time
1
1.6
2.2
ms
See Figure 26
VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓
tOFF
Turn off time
1.7
2.1
2.7
ms
See Figure 26
tR
Rise time, output
CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 25
0.4
0.64
0.9
ms
tF
Fall time, output
CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 25
0.25
0.4
0.8
ms
CURRENT LIMIT
TPD3S014
0.65
0.85
1.05
IOS
(2)
Current limit, see Figure 27
A
TPD3S044
1.60
2.15
2.70
VIN = 5 V (see Figure 27)
One Half full load
→ RSHORT = 50 mΩ Measure
tIOS
Short-circuit response time(3)
2
µs
from application to when current falls below
120% of final value
SUPPLY CURRENT
ISD
Supply current, switch disabled
IOUT = 0 A
0.02
10
µA
ISE
Supply current, switch enabled
IOUT = 0 A
66
94
µA
IREV
Reverse leakage current
VOUT = 5.5 V, VIN = 0 V, Measure IVOUT
0.2
20
µA
UNDERVOLTAGE LOCKOUT
VUVLO
Rising threshold
VIN
3.5
3.77
4
V
Hysteresis
VIN
0.14
V
OUTPUT DISCHARGE
VIN = 4 V, VOUT = 5 V, Disabled
350
545
1200
RPD
Output pull-down resistance
Ω
VIN = 5 V, VOUT = 5 V, Disabled
300
456
800
THERMAL SHUTDOWN
In current limit
135
TSHDN
Rising threshold (TJ)
°C
Not in current limit
155
Hysteresis(3)
20
°C
ESD PROTECTION
II
Input leakage current (D1, D2)
VI = 3.3 V
0.02
1
µA
Diode forward voltage (D1, D2);
VD
IO = 8 mA
0.95
V
Lower clamp diode
VBR
Breakdown voltage (D1, D2)
IBR = 1 mA
6
V
(1)
Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2)
See Current Limit section for explanation of this parameter.
(3)
These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purposes of TI’s
product warranty.
6
Submit Documentation Feedback
Copyright © 2014–2015, Texas Instruments Incorporated
Product Folder Links: TPD3S014 TPD3S044


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