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TPD3S716-Q1 数据表(PDF) 4 Page - Texas Instruments |
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TPD3S716-Q1 数据表(HTML) 4 Page - Texas Instruments |
4 / 32 page 4 TPD3S716-Q1 SLVSDH9C – MARCH 2016 – REVISED JUNE 2016 www.ti.com Product Folder Links: TPD3S716-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum. (3) Thermal limits and power dissipation limits must be observed. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT VBUS_CON Supply voltage from USB connector –0.3 18 V VBUS_SYS Internal Supply DC voltage Rail on the PCB –0.3 6 V VD+, VD– Voltage range from connector-side USB data lines –0.3 18 V D+, D– Voltage range for internal USB data lines –0.3 VIN + 0.3 V VIN Voltage range for VIN supply input –0.3 4 V DEN Voltage on enable pins 7 V VEN 7 V IBUS Maximum DC output current on VBUS_CON pin (3) 2.4 A VIADJ Voltage range for IADJ pin –0.3 VVBUS_SYS + 0.3 V VFLT Voltage range for the FLT pin –0.3 7 V TA Operating free air temperature(3) –40 125 °C TSTG Storage temperature –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings—AEC Specification VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V Charged-device model (CDM), per AEC Q100-011 ±1500 (1) See Figure 20 for details on system level ESD testing setup. 6.3 ESD Ratings—IEC Specification VALUE UNIT V(ESD) Electrostatic discharge IEC 61000-4-2, VBUS_CON, VD+, VD– pins Contact discharge(1) ±8000 V Air-gap discharge(1) ±15000 (1) See Figure 20 for details on system level ESD testing setup. 6.4 ESD Ratings—ISO Specification VALUE UNIT V(ESD) Electrostatic discharge ISO 10605 (330 pF, 330 Ω), VBUS_CON, VD+, VD– pins Contact discharge(1) ±8000 V Air-gap discharge(1) ±15000 6.5 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VBUS_CON Supply voltage from USB connector 5.9 V VBUS_SYS Internal supply DC voltage Rail on the PCB 4.75 5.9 V VD+, VD– Voltage range from connector-side USB data lines 0 VIN + 0.3 V D+, D– Voltage range for internal USB data lines 0 VIN + 0.3 V VIN Voltage range for VIN supply 3 3.6 V |
类似零件编号 - TPD3S716-Q1 |
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类似说明 - TPD3S716-Q1 |
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