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TPD2E2U06 数据表(PDF) 5 Page - Texas Instruments |
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TPD2E2U06 数据表(HTML) 5 Page - Texas Instruments |
5 / 21 page 5 TPD2E2U06-Q1 www.ti.com SLLSEJ9D – DECEMBER 2014 – REVISED MAY 2016 Product Folder Links: TPD2E2U06-Q1 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated (1) Transmission Line Pulse with 10-ns rise time, 100-ns width. (2) Measured at 25°C. (3) Extraction of RDYN Using least squares fit of TLP characteristics between I = 20 A and I = 30 A. 6.7 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse stand-off voltage IIO < 10 µA 5.5 V VCLAMP IO to GND IPP = 1 A, TLP (1) (2) 9.7 V IPP = 5 A, TLP (1) (2) 12.4 VCLAMP GND to IO IPP = 1 A, TLP (1) (2) 1.9 V IPP = 5 A, TLP (1) (2) 4 RDYN Dynamic resistance IO to GND(3)(2) 0.6 Ω GND to IO(3)(2) 0.4 CL Line capacitance f = 1 MHz, VBIAS = 2.5 V (2) 1.5 1.9 pF CCROSS Channel-to-channel input capacitance Pin 3 = 0 V, f = 1 MHz, VBIAS = 2.5 V, between channel pins(2) 0.02 0.03 pF ∆CL Variation of channel input capacitance Pin 3 = 0 V, f = 1 MHz, VBIAS = 2.5 V, Pin 1 to GND – Pin 2 to GND(2) 0.03 0.1 pF VBR Break-down voltage IIO = 1 mA (2) 6.5 8.5 V ILEAK Leakage current VIO = 2.5 V 1 10 nA |
类似零件编号 - TPD2E2U06 |
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类似说明 - TPD2E2U06 |
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