BC847BVN datasheet(3/8 Pages) PHILIPS

部件名	BC847BVN

功能描述	NPN/PNP general purpose transistor

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 8 page

2001 Nov 07

3

Philips Semiconductors

Product speciﬁcation

NPN/PNP general purpose transistor

BC847BVN

THERMAL CHARACTERISTICS

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering is reflow soldering.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB = 30 V; IE =0

−−

15

nA

VCB = 30 V; IE = 0; Tj = 150 °C

−−

5

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

100

nA

hFE

DC current gain

VCE =5V; IC =2mA

200

−

450

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−−

100

mV

IC = 100 mA; IB = 5 mA; note 1

−−

300

mV

VBEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA

−

755

−

mV

fT

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

−−

MHz

NPN transistor

VBE

base-emitter turn-on voltage

VCE =5V; IC = 2 mA

580

655

700

mV

Cc

collector capacitance

VCB = 10 V; IE =Ie = 0; f = 1MHz

−−

1.5

pF

Ce

emitter capacitance

VEB = 500 mV; IC =Ic = 0; f = 1MHz

−

11

−

pF

PNP transistor

VBE

base-emitter turn-on voltage

VCE = −5 V; IC = −2 mA

600

655

750

mV

Cc

collector capacitance

VCB = −10 V; IC =Ic = 0; f = 1MHz

−−

2.2

pF

Ce

emitter capacitance

VEB = −500 mV; IE =Ie = 0; f = 1MHz −

10

−

pF

类似零件编号 - BC847BVN

制造商	部件名	数据表	功能描述
Diodes Incorporated	BC847BVN	228Kb / 4P	COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30627 Rev. 4 - 2
NXP Semiconductors	BC847BVN	143Kb / 8P	NPN/PNP general purpose transistor 2001 Nov 07
NXP Semiconductors	BC847BVN	143Kb / 8P	NPN/PNP general purpose transistor 2001 Nov 07
Nexperia B.V. All right...	BC847BVN	200Kb / 9P	45 V, 100 mA NPN/PNP general purpose transistor 27 December 2022
NXP Semiconductors	BC847BVN-115	143Kb / 8P	NPN/PNP general purpose transistor 2001 Nov 07

More results

类似说明 - BC847BVN

制造商	部件名	数据表	功能描述
NXP Semiconductors	BC817DPN	78Kb / 12P	NPN/PNP general purpose transistor 2002 Nov 22
	BC847BPN	47Kb / 8P	NPN/PNP general purpose transistor 1999 Apr 26
	BC847BVN-115	143Kb / 8P	NPN/PNP general purpose transistor 2001 Nov 07
	BCV65	276Kb / 11P	NPN/PNP general-purpose transistor Rev. 4-27 July 2010
	BCV65	276Kb / 11P	NPN/PNP general-purpose transistor Rev. 4-27 July 2010
	BC847BVN	143Kb / 8P	NPN/PNP general purpose transistor 2001 Nov 07
Nexperia B.V. All right...	BC817DPN	222Kb / 9P	NPN/PNP general purpose transistor 27 November 2019
NXP Semiconductors	BC817DPN	155Kb / 10P	NPN/PNP general purpose transistor 2002 Nov 22
Nexperia B.V. All right...	BCV65	2Mb / 11P	NPN/PNP general-purpose transistor Rev. 4 - 27 July 2010
Nexperia B.V. All right...	PEMZ1	179Kb / 7P	NPN/PNP general purpose transistor 29 December 2022

More results

BC847BVN 数据表(PDF) 3 Page - NXP Semiconductors

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类似零件编号 - BC847BVN

类似说明 - BC847BVN

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BC847BVN 数据表(PDF) 3 Page - NXP Semiconductors

BC847BVN 数据表(HTML) 3 Page - NXP Semiconductors

类似零件编号 - BC847BVN

类似说明 - BC847BVN

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