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ES3CB 数据表(PDF) 2 Page - Diode Semiconductor Korea |
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ES3CB 数据表(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page TJ=25 1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . INSTANTANEOUS FORWARD VOLTAGE, VOLTS ES3AB --- ES3GB FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS PULSE GENERATOR (NOTE2) D.U.T. 1 NONIN- DUCTIVE 50 N 1. 10 N1. OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) -1.0A -0.25A 0 +0.5A trr 1cm 0.1 0.8 0.01 0.4 0 Pulse width=300 s 1%Duty Cycle 1.0 1.8 1.0 10 100 TJ=25 3.0 0 80 100 110 100 60 5 8.3ms Single Half Sine-Wave 50 20 40 1.5 3 0 25 50 75 100 125 150 Single Phase Half Wave 60HZ Resistive or Inductive Load 0 175 Diode Semiconductor Korea www.diode.kr |
类似零件编号 - ES3CB |
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类似说明 - ES3CB |
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