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TL750M08 数据表(PDF) 5 Page - Texas Instruments |
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TL750M08 数据表(HTML) 5 Page - Texas Instruments |
5 / 23 page TL750Mxx-Q1, TL751Mxx-Q1 www.ti.com SGLS312J – SEPTEMBER 2005 – REVISED JUNE 2011 TL750M12/TL751M12 ELECTRICAL CHARACTERISTICS VI = 14 V, IO = 300 mA, ENABLE at 0 V for TL751M12, TJ = –40°C to 125°C (unless otherwise noted) (1) TL750M12 TL751M12 PARAMETER TEST CONDITIONS UNIT MIN TYP MAX Output voltage VI = 13 V to 26 V 11.76 12 12.24 V VI = 14 V to 19 V, IO = 250 mA 15 43 Line regulation mV VI = 13 V to 26 V, IO = 250 mA 20 78 Power-supply ripple rejection VI = 13 V to 23 V, f = 120 Hz 50 55 dB Load regulation IO = 5 mA to 750 mA 30 120 mV IO = 500 mA, TJ = 25°C 0.5 Dropout voltage(2) V IO = 750 mA, TJ = 25°C 0.6 IO = 750 mA, TJ = 25°C 60 75 Current consumption mA Iq = II – IO IO = 10 mA 5 Shutdown current (TL751M12 only) ENABLE VIH ≥ 2 V 200 µA (1) Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be taken into account separately. All characteristics are measured with a 0.1- µF capacitor across the input and a 10-µF tantalum capacitor on the output, with equivalent series resistance within the guidelines shown in Figure 4. (2) Measured when the output voltage, VO, has dropped 100 mV from the nominal value obtained at VI = 14 V. Copyright © 2005–2011, Texas Instruments Incorporated 5 |
类似零件编号 - TL750M08 |
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类似说明 - TL750M08 |
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