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MTB020N03E3 数据表(PDF) 6 Page - Cystech Electonics Corp. |
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MTB020N03E3 数据表(HTML) 6 Page - Cystech Electonics Corp. |
6 / 8 page CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 6/8 MTB020N03E3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 5 10 15 20 25 30 35 40 45 50 02 46 8 10 VGS, Gate-Source Voltage(V) VDS=10V Single Pulse Maximum Power Dissipation 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) TJ(MAX)=150°C TC=25°C RθJC=2.2°C/W Transient Thermal Response Curves 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.2 °C/W |
类似零件编号 - MTB020N03E3 |
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类似说明 - MTB020N03E3 |
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