LS421, LS422, LS423,

LS424, LS425, LS426

LOW LEAKAGE LOW DRIFT

MONOLITHIC DUAL N-CHANNEL JFET

Linear Integrated Systems

22 X 20 MILS

G1

S2

S1

G2

D2

D1

4

3

5

2

6

1

7

C

G1

S2

D1

D2

S1

G2

TO-78

BOTTOM VIEW

Linear Integrated Systems

4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 • FAX: (510) 353-0261

FEATURES

HIGH INPUT IMPEDANCE

I

G

=0.25pA MAX

HIGH GAIN

gfs=120

µmho MIN

LOW POWER OPERATION

V

GS(off)

=2V MAX

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25

°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-65

° to +150°C

Operating Junction Temperature

+150

°C

Maximum Voltage and Current for Each Transistor NOTE 1

-V

GSS

Gate Voltage to Drain or Source

40V

-V

DSO

Drain to Source Voltage

40V

-I

G(f)

Gate Forward Current

10mA

Maximum Power Dissipation

Device Dissipation @ Free Air - Total

400mW @ +125

°C

SYMBOL

CHARACTERISTICS

MIN.

TYP.

MAX.

UNITS

CONDITIONS

BV

GSS

Breakdown Voltage

40

60

--

V

V

DS

= 0

I

G

= 1nA

BV

GGO

Gate-to-Gate Breakdown

40

--

--

V

I

G

= 1

µAI

D

= 0

I

S

= 0

TRANSCONDUCTANCE

Y

fss

Full Conduction

300

--

1500

µmho V

DS

= 10V

V

GS

= 0

f= 1kHz

Y

fs

Typical Operation

120

200

350

µmho V

DG

= 10V

I

D

= 30

µA

f= 1kHz

DRAIN CURRENT

60

--

1000

µA

LS421-3

V

DS

= 10V

V

GS

= 0

I

DSS

Full Conduction

60

--

1800

µA

LS424-6

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

CHARACTERISTICS LS421 LS422 LS423 LS424 LS425 LS426 UNITS MAX CONDITIONS

|

∆V

GS1-2

/

∆T| max. Drift vs. Temperature

10

25

40

10

25

40

µV/°CV

DG

= 10V

I

D

= 30

µA

T

A

=-55

°C to +125°C

|V

GS1-2

| max.

Offset Voltage

10

15

25

10

15

25

mV

V

DG

=10V

I

D

= 30

µA

GATE VOLTAGE

V

GS(off)

Pinchoff Voltage

2.0

2.0

2.0

3.0

3.0

3.0

V

V

DS

=10V

I

D

= 1nA

V

GS

Operating Range

1.8

1.8

1.8

2.9

2.9

2.9

V

V

DG

=10V

I

D

= 30

µA

I

G

max.

Operating

.25

.25

.25

.500

.500

.500

pA

V

DG

=10V

I

D

= 30

µA

-I

G

max.

High Temperature

250

250

250

500

500

500

pA

T

A

= +125

°C

-I

GSS

max.

At Full Conduction

1.0

1.0

1.0

3.0

3.0

3.0

pA

V

DS

= 0V

V

GS

= 20V

-I

GSS

max.

High Temperature

1.0

1.0

1.0

3.0

3.0

3.0

nA

T

A

= +125

°C