LS302 datasheet(1/2 Pages) LINEAR

部件名	LS302

功能描述	HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS

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制造商	LINEAR [Linear Integrated Systems]

网页	http://www.linearsystems.com

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Linear Integrated Systems

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261

1

7

35

BOTTOM VIEW

2

6

ELECTRICAL CHARACTERISTICS @ 25

°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

LS301

LS302

LS303

UNITS

CONDITIONS

BV

CBO

Collector to Base Voltage

18

35

10

MIN.

V

I

C

= 10

µAI

E

= 0

BV

CEO

Collector to Emitter Voltage

18

35

10

MIN.

V

I

C

= 10

µAI

B

= 0

BV

EBO

Emitter-Base Breakdown Voltage

6.2

MIN.

V

I

E

= 10

µA

I

C

= 0

NOTE 2

BV

CCO

Collector to Collector Voltage

100

MIN.

V

I

C

= 10

µAI

E

= 0

h

FE

DC Current Gain

2000

1000

2000

TYP.

I

C

= 1

µAV

CE

= 5V

h

FE

DC Current Gain

2000

1000

2000

MIN.

I

C

= 10

µAV

CE

= 5V

h

FE

DC Current Gain

2000

1000

2000

TYP.

I

C

= 500

µAV

CE

= 5V

V

CE

(SAT)

Collector Saturation Voltage

0.5

MAX.

V

I

C

= 1mA

I

B

= 0.1mA

I

CBO

Collector Cutoff Current

100

MAX.

pA

I

E

= 0

V

CB

= NOTE 3

I

EBO

Emitter Cutoff Current

0.2

MAX.

pA

I

E

= 0

V

EB

= 3V

C

OBO

Output Capacitance

2

MAX.

pF

I

E

= 0

V

CB

= 1V

C

C1C2

Collector to Collector Capacitance

2

MAX.

pF

V

CC

= 0

I

C1C2

Collector to Collector Leakage Current

0.5

MAX.

nA

V

CC

= NOTE 4

f

T

Current Gain Bandwidth Product

100

MIN.

MHz

I

C

= 200

µAV

CE

= 5V

NF

Narrow Band Noise Figure

3

MAX.

dB

I

C

= 10

µAV

CE

= 3V

BW = 200Hz

R

G

= 10 K

Ω

f = 1KHz

FEATURES

VERY HIGH GAIN

h

FE ≥

2000 @ 1.0

µA TYP.

LOW OUTPUT CAPACITANCE

C

OBO ≤

2.0pF

TIGHT V

BE

MATCHING

|V

BE1

-V

BE2

| = 0.2mV TYP.

HIGH f

T

100MHz

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25

°C (unless otherwise noted)

I

C

Collector Current

5mA

Maximum Temperatures

Storage Temperature

-65

° to +200°C

Operating Junction Temperature

+150

°C

Maximum Power Dissipation

ONE SIDE

BOTH SIDES

Device Dissipation @ Free Air

250mW

500mW

Linear Derating Factor

2.3mW/

°C

4.3mW/

°C

B1

E1

E2

B2

C1

C2

26 X 29 MILS

E1

E2

C1

C2

B1

B2

LS301

LS302

LS303

HIGH VOLTAGE

SUPER-BETA MONOLITHIC

DUAL NPN TRANSISTORS

类似零件编号 - LS302

制造商	部件名	数据表	功能描述
Micross Components	LS302	277Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
Linear Integrated Syste...	LS302	178Kb / 2P	HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
Micross Components	LS302_PDIP	277Kb / 1P	MONOLITHIC DUAL NPN TRANSISTOR
	LS302_SOIC	288Kb / 1P	MONOLITHIC DUAL NPN TRANSISTOR
	LS302_SOT-23	272Kb / 1P	MONOLITHIC DUAL NPN TRANSISTOR

More results

类似说明 - LS302

制造商	部件名	数据表	功能描述
Linear Integrated Syste...	LS301	178Kb / 2P	HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
Linear Integrated Syste...	LSIT124	28Kb / 2P	SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS
Micross Components	LS310	276Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
	LS303	276Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
	LS302	277Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
	LS312	276Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
	LS301	276Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
	LS313	275Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
	LS311	275Kb / 1P	Linear Systems High Voltage Super-Beta Monolithic Dual NPN
Linear Integrated Syste...	LSIT120-2	28Kb / 2P	MONOLITHIC DUAL NPN TRANSISTORS

More results

LS302 数据表(PDF) 1 Page - Linear Integrated Systems

LS302 数据表(HTML) 1 Page - Linear Integrated Systems

类似零件编号 - LS302

类似说明 - LS302

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LS302 数据表(PDF) 1 Page - Linear Integrated Systems

LS302 数据表(HTML) 1 Page - Linear Integrated Systems

类似零件编号 - LS302

类似说明 - LS302

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1 2

数据表 下载

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