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SI4501DY 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4501DY 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  Si4501DY Vishay Siliconix New Product www.vishay.com 2-2 Document Number: 70934 S-61812—Rev. B, 19-Jul-99 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS( h) VDS = VGS, ID = 250 mA N-Ch 0.8 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA NCh P-Ch - 0.45 V Gate Body Leakage IGSS VDS = 0 V, VGS = "20 V N-Ch "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V NCh P-Ch "100 nA VDS = 24 V, VGS = 0 V N-Ch 1 Zero Gate Voltage Drain Current IDSS VDS = - 6.4 V, VGS = 0 V NCh P-Ch -1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 mA VDS = - 6.4 V, VGS = 0 V, TJ = 55_C NCh P-Ch -5 On State Drain Currentb ID( ) VDS = 5 V, VGS = 10 V N-Ch 30 A On-State Drain Currentb ID(on) VDS = - 5 V, VGS = - 4.5 V NCh P-Ch -20 A VGS = 10 V, ID = 9 A N-Ch 0.015 0.018 Drain Source On State Resistanceb rDS( ) VGS = - 4.5 V, ID = - 6.2 A NCh P-Ch 0.034 0.042 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 7.4 A N-Ch 0.022 0.027 W VGS = - 2.5 V, ID = - 5.2 A NCh P-Ch 0.048 0.060 Forward Transconductanceb gf VDS = 15 V, ID = 9 A N-Ch 20 S Forward Transconductanceb gfs VDS = - 15 V, ID = - 6.2 A NCh P-Ch 14 S Diode Forward Voltageb VSD IS = 1.7 A, VGS = 0 V N-Ch 0.71 1.1 V Diode Forward Voltageb VSD IS = - 1.7 A, VGS = 0 V NCh P-Ch - 0.70 - 1.1 V Dynamica Total Gate Charge Q N-Ch 4.5 20 Total Gate Charge Qg N-Channel NCh P-Ch 15 25 Gate Source Charge Q N-Channel VDS = 15 V, VGS = 5 V, ID = 9 A N-Ch 3.3 nC Gate-Source Charge Qgs P-Channel V V V V I 62 A NCh P-Ch 3.0 nC Gate Drain Charge Q d P Channel VDS = - 4 V, VGS = - 5 V, ID = - 6.2 A N-Ch 6.6 Gate-Drain Charge Qgd NCh P-Ch 2.0 Turn On Delay Time td( ) N-Ch 13 20 Turn-On Delay Time td(on) NCh l NCh P-Ch 20 40 Rise Time t N-Channel VDD = 15 V, RL = 15 W N-Ch 9 18 Rise Time tr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W NCh P-Ch 50 100 Turn Off Delay Time td( ff) P-Channel V 4 V R 4 W N-Ch 35 50 ns Turn-Off Delay Time td(off) VDD = - 4 V, RL = 4 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W NCh P-Ch 110 220 ns Fall Time tf ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W N-Ch 17 30 Fall Time tf NCh P-Ch 60 120 Source Drain Reverse Recovery Time t IF = 1 7 A di/dt = 100 A/ms N-Ch 35 70 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A/ms NCh P-Ch 60 100 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
类似零件编号 - SI4501DY |
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类似说明 - SI4501DY |
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