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IXYP20N65B3 数据表(PDF) 2 Page - IXYS Corporation |
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IXYP20N65B3 数据表(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYA20N65B3 IXYP20N65B3 IXYH20N65B3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 20A, VCE = 10V, Note 1 8.5 14 S C ies 826 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 66 pF C res 19 pF Q g(on) 29 nC Q ge I C = 20A, VGE = 15V, VCE = 0.5 • VCES 6 nC Q gc 14 nC t d(on) 12 ns t ri 25 ns E on 0.50 mJ t d(off) 103 ns t fi 87 ns E off 0.45 0.70 mJ t d(on) 13 ns t ri 26 ns E on 0.93 mJ t d(off) 124 ns t fi 147 ns E off 0.76 mJ R thJC 0.65 °C/W R thCS TO-220 0.50 °C/W R thCS TO-247 0.21 °C/W Inductive load, T J = 25°C I C = 20A, VGE = 15V V CE = 400V, RG = 20 Note 2 Inductive load, T J = 150°C I C = 20A, VGE = 15V V CE = 400V, RG = 20 Note 2 TO-263 Outline 1 = Gate 2 = Collector 3 = Emitter 4 = Collector 1 - Gate 2,4 - Collector 3 - Emitter TO-247 Outline Pins: 1 - Gate 2 - Collector 3 - Emitter TO-220 Outline ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. |
类似零件编号 - IXYP20N65B3 |
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类似说明 - IXYP20N65B3 |
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