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SS239EUA 数据表(PDF) 1 Page - SEC Electronics Inc. |
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SS239EUA 数据表(HTML) 1 Page - SEC Electronics Inc. |
1 / 8 page SS239 CMOS Omnipolar High Sensitivity Micropower Hall Switch 1 V3.10 Nov 1, 2013 Packages Features and Benefits 3 pin SOT23 (suffix SO) 3 pin SIP (suffix UA) – Operation down to 2.5V – Micropower consumption for battery powered applications – High sensitivity for direct reed switch replacement applications – Omnipolar, output switches with absolute value of North or South pole from magnet Functional Block Diagram Application Examples – Solid-state switch – Handheld Wireless Handset Awake Switch – Lid close sensor for battery powered devices – Magnet proximity sensor for reed switch replacement in low duty cycle applications General Description The SS239 Omnipolar Hall effect sensor IC is fabri- cated from mixed signal CMOS technology. It incor- porates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresholds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. The output transistor of the SS239 will be latched on (BOP) in the presence of a sufficiently strong South or North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence of a magnetic field. VDD OUT Sleep/Awake Logic Chopper Hall Plate GND |
类似零件编号 - SS239EUA |
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类似说明 - SS239EUA |
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