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LM193AJRQMLV 数据表(PDF) 7 Page - Texas Instruments |
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LM193AJRQMLV 数据表(HTML) 7 Page - Texas Instruments |
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7 / 22 page  LM193A, LM193QML www.ti.com SNOSAM2C – MAY 2005 – REVISED MARCH 2013 LM193A - 100K Radiation Electrical Characteristics DC Parameters (1)(2) (continued) The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameter Conditions Sub- Notes Min Max Unit groups VDiff Differential Input Voltage +V = 30V, +VI = 36V, -VI = 0V See(4) 500 nA 1, 2, 3 +V = 30V, +VI = 0V, -VI = +36V See(4) 500 nA 1, 2, 3 AVS Voltage Gain +V = 15V, RPullUp = 15KΩ See(3) 50 V/mV 4 1V ≤ VO ≤ 11V, See(5) 25 V/mV 5, 6 (4) The value for VDiff is not datalogged during Read and Record. (5) Datalog reading in K = V/mV. LM193A - 100K Radiation Electrical Characteristics AC Parameters (1) (2) The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameter Conditions Sub- Notes Min Max Unit groups tRLH Response Time VOD = 5mV 5.0 µS 9 VOD = 50mV 0.8 µS 9 tRHL Response Time VOD = 5mV 2.5 µS 9 VOD = 50mV 0.8 µS 9 (1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019 (2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. LM193A - 100K Radiation Electrical Characteristics (Continued) DC Drift Parameters (1) (2) The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Delta calculations performed on QMLV devices at Group B, Subgroup 5 only Symbol Parameter Conditions Sub- Notes Min Max Unit groups VIO Input Offset Voltage +V = 30V -1.0 1.0 mV 1 ±IIB Input Bias Current -15 15 nA 1 (1) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. (2) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019 LM193A - 100K Radiation Electrical Characteristics (Continued) AC Parameters - Post Radiation Limits @ +25°C (1) (2) The following conditions apply, unless otherwise specified. +V = 5V, VCM = 0V Symbol Parameter Conditions Sub- Notes Min Max Unit groups tRLH Response Time VOD = 50mV 1.0 µS 9 (1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019 (2) Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: LM193A LM193QML |
类似零件编号 - LM193AJRQMLV |
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