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LM193MDE 数据表(PDF) 7 Page - Texas Instruments

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部件名 LM193MDE
功能描述  Low Power Low Offset Voltage Dual Comparators
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

LM193MDE 数据表(HTML) 7 Page - Texas Instruments

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LM193A, LM193QML
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SNOSAM2C – MAY 2005 – REVISED MARCH 2013
LM193A - 100K Radiation Electrical Characteristics DC Parameters
(1)(2) (continued)
The following conditions apply, unless otherwise specified.
+V = 5V, VCM = 0V
Symbol
Parameter
Conditions
Sub-
Notes
Min
Max
Unit
groups
VDiff
Differential Input Voltage
+V = 30V, +VI = 36V, -VI = 0V
See(4)
500
nA
1, 2, 3
+V = 30V, +VI = 0V, -VI = +36V
See(4)
500
nA
1, 2, 3
AVS
Voltage Gain
+V = 15V, RPullUp = 15KΩ
See(3)
50
V/mV
4
1V
≤ VO ≤ 11V,
See(5)
25
V/mV
5, 6
(4)
The value for VDiff is not datalogged during Read and Record.
(5)
Datalog reading in K = V/mV.
LM193A - 100K Radiation Electrical Characteristics AC Parameters
(1) (2)
The following conditions apply, unless otherwise specified.
+V = 5V, VCM = 0V
Symbol
Parameter
Conditions
Sub-
Notes
Min
Max
Unit
groups
tRLH
Response Time
VOD = 5mV
5.0
µS
9
VOD = 50mV
0.8
µS
9
tRHL
Response Time
VOD = 5mV
2.5
µS
9
VOD = 50mV
0.8
µS
9
(1)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post
Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019
(2)
Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
LM193A - 100K Radiation Electrical Characteristics (Continued) DC Drift Parameters
(1) (2)
The following conditions apply, unless otherwise specified.
+V = 5V, VCM = 0V
Delta calculations performed on QMLV devices at Group B, Subgroup 5 only
Symbol
Parameter
Conditions
Sub-
Notes
Min
Max
Unit
groups
VIO
Input Offset Voltage
+V = 30V
-1.0
1.0
mV
1
±IIB
Input Bias Current
-15
15
nA
1
(1)
Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
(2)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post
Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019
LM193A - 100K Radiation Electrical Characteristics (Continued) AC Parameters - Post Radiation
Limits @ +25°C
(1) (2)
The following conditions apply, unless otherwise specified.
+V = 5V, VCM = 0V
Symbol
Parameter
Conditions
Sub-
Notes
Min
Max
Unit
groups
tRLH
Response Time
VOD = 50mV
1.0
µS
9
(1)
Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post
Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect.
Radiation end point limits for the noted parameters are specified only for the conditions as specified in MIL-STD-883, Method 1019
(2)
Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no
enhanced low dose rate sensitivity (ELDRS) effect.
Copyright © 2005–2013, Texas Instruments Incorporated
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