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CSD23381F4 数据表(PDF) 3 Page - Texas Instruments

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部件名 CSD23381F4
功能描述  12 V P-Channel FemtoFET MOSFET
Download  13 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CSD23381F4 数据表(HTML) 3 Page - Texas Instruments

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CSD23381F4
www.ti.com
SLPS450E – OCTOBER 2013 – REVISED MAY 2015
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, IDS = –250 μA
–12
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = –9.6 V
–100
nA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = –8 V
–50
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, IDS = –250 μA
–0.7
–0.95
–1.20
V
VGS = –1.8 V, IDS = –0.1 A
480
970
m
RDS(on)
Drain-to-Source On-Resistance
VGS = –2.5 V, IDS = –0.5 A
250
300
m
VGS = –4.5 V, IDS = –0.5 A
150
175
m
gƒs
Transconductance
VDS = –6 V, IDS = –0.5 A
2
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
236
pF
VGS = 0 V, VDS = –6 V,
Coss
Output Capacitance
98
pF
ƒ = 1 MHz
Crss
Reverse Transfer Capacitance
6.9
pF
RG
Series Gate Resistance
20
Qg
Gate Charge Total (4.5 V)
1140
pC
Qgd
Gate Charge Gate-to-Drain
190
pC
VDS = –6 V, IDS = –0.5 A
Qgs
Gate Charge Gate-to-Source
300
pC
Qg(th)
Gate Charge at Vth
145
pC
Qoss
Output Charge
VDS = –6 V, VGS = 0 V
1290
pC
td(on)
Turn On Delay Time
4.5
ns
tr
Rise Time
3.9
ns
VDS = –6 V, VGS = –4.5 V,
IDS = –0.5 A, RG = 2 Ω
td(off)
Turn Off Delay Time
18
ns
tƒ
Fall Time
7
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = –0.5 A, VGS = 0 V
–0.75
V
Qrr
Reverse Recovery Charge
1260
pC
VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs
trr
Reverse Recovery Time
7.9
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
TYPICAL VALUES
UNIT
Junction-to-Ambient Thermal Resistance(1)
85
RθJA
°C/W
Junction-to-Ambient Thermal Resistance(2)
245
(1)
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
Copyright © 2013–2015, Texas Instruments Incorporated
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