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CSD19532Q5B 数据表(PDF) 6 Page - Texas Instruments |
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CSD19532Q5B 数据表(HTML) 6 Page - Texas Instruments |
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6 / 14 page  0 20 40 60 80 100 120 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 10us 100us 1ms 10ms DC Single Pulse Width Max RthetaJC = 0.8ºC/W G001 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 −75 −25 25 75 125 175 TC - Case Temperature (ºC) VGS = 6V VGS = 10V ID =17A G001 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage (V) TC = 25°C TC = 125°C G001 CSD19532Q5B SLPS414A – DECEMBER 2013 – REVISED JUNE 2014 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2013–2014, Texas Instruments Incorporated Product Folder Links: CSD19532Q5B |
类似零件编号 - CSD19532Q5B |
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类似说明 - CSD19532Q5B |
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