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CSD18542KCS 数据表(PDF) 3 Page - Texas Instruments |
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CSD18542KCS 数据表(HTML) 3 Page - Texas Instruments |
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3 / 11 page  CSD18542KCS www.ti.com SLPS557 – JUNE 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.2 V VGS = 4.5 V, ID = 100 A 4.0 5.1 m Ω RDS(on) Drain-to-source on-resistance VGS = 10 V, ID = 100 A 3.3 4.0 m Ω gfs Transconductance VDS = 30 V, ID = 100 A 198 S DYNAMIC CHARACTERISTICS Ciss Input capacitance 3900 5070 pF Coss Output capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 570 740 pF Crss Reverse transfer capacitance 11 14 pF RG Series gate resistance 1.3 2.6 Ω Qg Gate charge total (4.5 V) 21 27 nC Qg Gate charge total (10 V) 44 57 nC Qgd Gate charge gate-to-drain VDS = 30 V, ID = 100 A 6.9 nC Qgs Gate charge gate-to-source 10 nC Qg(th) Gate charge at Vth 7.3 nC Qoss Output charge VDS = 30 V, VGS = 0 V 63 nC td(on) Turn on delay time 6 ns tr Rise time 5 ns VDS = 30 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω td(off) Turn off delay time 18 ns tf Fall time 21 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.0 V Qrr Reverse recovery charge 148 nC VDS= 30 V, IF = 100 A, di/dt = 300 A/ μs trr Reverse recovery time 53 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.6 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD18542KCS |
类似零件编号 - CSD18542KCS |
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类似说明 - CSD18542KCS |
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