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CSD17577Q5A 数据表(PDF) 1 Page - Texas Instruments |
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CSD17577Q5A 数据表(HTML) 1 Page - Texas Instruments |
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1 / 13 page  0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 16A TC = 125°C,I D = 16A G001 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 Qg - Gate Charge (nC) ID = 18A VDS = 15V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17577Q5A SLPS516 – AUGUST 2014 CSD17577Q5A 30-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 30 V • Avalanche Rated Qg Gate Charge Total (4.5 V) 13 nC Qgd Gate Charge Gate-to-Drain 2.8 nC • Pb Free Terminal Plating VGS = 4.5 V 4.8 m Ω • RoHS Compliant RDS(on) Drain-to-Source On-Resistance VGS = 10 V 3.5 m Ω • Halogen Free VGS(th) Threshold Voltage 1.4 V • SON 5 mm × 6 mm Plastic Package Ordering Information(1) 2 Applications Device Qty Media Package Ship • Point of Load Synchronous Buck in Networking, CSD17577Q5A 2500 13-Inch Reel SON 5 × 6 mm Tape and Telecom, and Computing Systems Plastic Package Reel CSD17577Q5AT 250 7-Inch Reel • Optimized for Control, and Sync FET Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description Absolute Maximum Ratings This 30 V, 3.5 m Ω, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize resistance in TA = 25°C VALUE UNIT power conversion applications. VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ±20 V Top Icon Continuous Drain Current (Package limited) 60 Continuous Drain Current (Silicon limited), ID 83 A TC = 25°C Continuous Drain Current (1) 22 IDM Pulsed Drain Current (2) 280 A Power Dissipation(1) 3 PD W Power Dissipation, TC = 25°C 53 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 39 mJ ID = 28, L = 0.1 mH, RG = 25 Ω (1) Typical RθJA = 40°C/W on a 1-inch 2 , 2-oz. Cu pad on a . 0.06-inch thick FR4 PCB. . (2) Max RθJC = 2.8°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
类似零件编号 - CSD17577Q5A_16 |
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类似说明 - CSD17577Q5A_16 |
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