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KSD288 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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KSD288 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD362 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 55 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.5mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 5 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.0 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 50 μ A hFE DC Current Gain IC= 0.5A; VCE= 5V 40 240 hFE Classifications R O Y 40-80 70-140 120-240 |
类似零件编号 - KSD288 |
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类似说明 - KSD288 |
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